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2.2 kV SiC BJTs wit...
2.2 kV SiC BJTs with low V(CESAT) fast switching and short-circuit capability
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- Domeij, Martin (author)
- KTH,Integrerade komponenter och kretsar
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Zaring, C. (author)
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Konstantinov, A. O. (author)
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Nawaz, M. (author)
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Svedberg, J-O (author)
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Gumaelius, K. (author)
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Keri, I. (author)
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Lindgren, A. (author)
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Hammarlund, B. (author)
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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Reimark, M. (author)
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(creator_code:org_t)
- 2010
- 2010
- English.
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In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2. ; , s. 1033-1036
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- This paper reports large active area (15 mm(2)) 4H-SiC BJTS with a low V(CESAT)=0.6 V at 1(C)=20 A (J(C)=133 A/cm(2)) and an open-base breakdown voltage BV(CEO)=2.3 kV at T=25 degrees C. The corresponding room temperature specific on-resistance R(SP.ON)=4.5 m Omega cm(2) is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The onstate and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VcE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 mu s short-circuit capability with V(CE)=800 V was shown for the 1200 V BJT.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar junction transistor
- V(CESAT)
- switching
- safe operating area
Publication and Content Type
- ref (subject category)
- kon (subject category)
To the university's database
- By the author/editor
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Domeij, Martin
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Zaring, C.
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Konstantinov, A. ...
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Nawaz, M.
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Svedberg, J-O
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Gumaelius, K.
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show more...
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Keri, I.
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Lindgren, A.
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Hammarlund, B.
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Östling, Mikael
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Reimark, M.
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Other Electrical ...
- Articles in the publication
- SILICON CARBIDE ...
- By the university
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Royal Institute of Technology