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Effects of N incorp...
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Dobrovolsky, AlexandrLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan
(author)
Effects of N incorporation on Raman properties and band structure of GaP/GaNP core/shell nanowires
- Article/chapterEnglish2013
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LIBRIS-ID:oai:DiVA.org:liu-104246
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-104246URI
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Subject category:ref swepub-contenttype
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Subject category:kon swepub-publicationtype
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Kuang, Y. J.Department of Physics, University of California, La Jolla, California, USA
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Sukrittanon, S.Graduate Program of Materials Science and Engineering, La Jolla, California, USA
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Tu, C. W.Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, USA
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Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55
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Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40
(author)
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Linköpings universitetFunktionella elektroniska material
(creator_code:org_t)
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In:Int. Conf. Nanowires (ICON2013), s. P2.31-
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