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  • Wang, XinLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan (author)

Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering

  • Article/chapterEnglish1999

Publisher, publication year, extent ...

  • American Institute of Physics (AIP),1999
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-105975
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-105975URI
  • https://doi.org/10.1116/1.581619DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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Classification

  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Epitaxial (001) oriented SrTiO3 films have been deposited on LaAlO3(001) substrates by off-axis radio frequency magnetron sputtering in Ar:O-2 gas mixtures at substrate temperatures ranging from 650 to 850 degrees C. For the deposition conditions used, stoichiometric targets yielded 20% Sr-deficient films, whereas Sr-enriched targets (Sr1.1TiO0.9O3.0) resulted in stoichiometric films. The Sr-deficient films had a mosaic structure and a larger lattice parameter in comparison to bulk SrTiO3. The stoichiometric films on the other hand had a much higher crystalline quality in the as-deposited condition. The mosaicity of the latter films was primarily limited by the crystalline quality of the LaAlO3 substrates. The lattice parameters of the stoichiometric films were also smaller than the Sr-deficient ones and closer to the bulk value. The dielectric properties of the stoichiometric films were superior to the Sr-deficient films. For films with a thickness of similar to 300 nm, the typical dielectric constants as measured at similar to 77 K and I MHz were determined to be 820 and 500, for the stoichiometric and Sr-deficient films, respectively. Also the capacitance change, as a direct current bias voltage was applied to an interdigital capacitor, was higher for the stoichiometric film, 27.3% as compared to 8.6% when applying a bias of 300 V at 77 K. We also demonstrate the effectiveness of thermal annealing in improving both crystalline quality and dielectric properties, especially for the Sr-deficient films. (C) 1999 American Vacuum Society. [S0734-2101(99)010002-7].

Subject headings and genre

  • NATURAL SCIENCES
  • NATURVETENSKAP

Added entries (persons, corporate bodies, meetings, titles ...)

  • Helmersson, UlfLinköpings universitet,Plasma och ytbeläggningsfysik,Tekniska högskolan(Swepub:liu)ulfhe30 (author)
  • Madsen, Lynnette DLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan (author)
  • Ivanov, IvanLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)ivaiv28 (author)
  • Münger, PeterLinköpings universitet,Teoretisk Fysik,Tekniska högskolan(Swepub:liu)petmu26 (author)
  • Rudner, StaffanLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska högskolan(Swepub:liu)staru87 (author)
  • Hjörvarsson, BDepartment of Physics, Uppsala University, Sweden (author)
  • Sundgren, Jan-ErikLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan (author)
  • Linköpings universitetInstitutionen för fysik, kemi och biologi (creator_code:org_t)

Related titles

  • In:Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films: American Institute of Physics (AIP)17:2, s. 564-5700734-21011520-8559

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