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Optical investigation of 3C-SiC hetero-epitaxial layers grown by sublimation epitaxy under gas atmosphere
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- Kwasnicki, Pawel (author)
- CNRS, L2C UMR 5221, F-34095, Montpellier, France
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- Jokubavicius, Valdas (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Sun, Jianwu (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- (creator_code:org_t)
- Trans Tech Publications Inc. 2014
- 2014
- English.
- In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 778-780, s. 243-246
- Journal article (peer-reviewed)
Abstract
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- We investigated three 3C-SiC samples grown on 6H SiC substrate by sublimation epitaxy under gas atmosphere. We focus on the low temperature photoluminescence and Raman measurements to show that compare to a growth process under vacuum atmosphere, the gas atmosphere favor the incorporation of impurities at already existing and/or newly created defect sites.
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- Camasse, J.
- Juillaguet, S.
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