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Quantitative compar...
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Kawahara, KoutarouKyoto University, Japan
(author)
Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC
- Article/chapterEnglish2014
Publisher, publication year, extent ...
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American Institute of Physics (AIP),2014
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-106850
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-106850URI
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https://doi.org/10.1063/1.4871076DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C.
Added entries (persons, corporate bodies, meetings, titles ...)
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Trinh, Xuan ThangLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)xuatr28
(author)
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Son, Nguyen TienLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)nguso90
(author)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
(author)
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Suda, JunKyoto University, Japan
(author)
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Kimoto, TsunenobuKyoto University, Japan
(author)
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Kyoto University, JapanHalvledarmaterial
(creator_code:org_t)
Related titles
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In:Journal of Applied Physics: American Institute of Physics (AIP)115:14, s. 143705-0021-89791089-7550
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