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Quantitative compar...
Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC
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- Kawahara, Koutarou (author)
- Kyoto University, Japan
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- Trinh, Xuan Thang (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Son, Nguyen Tien (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Suda, Jun (author)
- Kyoto University, Japan
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- Kimoto, Tsunenobu (author)
- Kyoto University, Japan
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(creator_code:org_t)
- American Institute of Physics (AIP), 2014
- 2014
- English.
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 115:14, s. 143705-
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Abstract
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- In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C.
Publication and Content Type
- ref (subject category)
- art (subject category)
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