Silicon and oxygen in high-Al-content AlGaN: incorporation kinetics and electron paramagnetic resonance study

Kakanakova-Gueorguie, Anelia (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Nilsson, Daniel (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Trinh, Xuan Thang (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Son, Nguyen Tien (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Janzén, Erik (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

(creator_code:org_t)

Trans Tech Publications Inc. 2014
2014
English.
In: Gettering and Defect Engineering in Semiconductor Technology XV. - : Trans Tech Publications Inc.. ; , s. 441-445

Related links:: https://urn.kb.se/re...; show more...; https://doi.org/10.4...; show less...

Abstract Subject headings

The high-Al-content AlxGa1-xN alloys, xgreater than0.70, and AlN is the fundamental wide-band-gap material system associated with the technology development of solid-state LEDs operating at the short wavelengths in the deep-UV (lambda less than 280 nm). Yet, their properties are insufficiently understood. The present study is intended to bring elucidation on the long-time debated and much speculated Si transition from shallow donor in GaN to a localized deep DX defect in AlxGa1-xN alloys with increasing Al content. For that purpose electron paramagnetic resonance is performed on a particular selection of high-Al-content epitaxial layers of Al0.77Ga0.23N, alternatively Al0.72Ga0.28N, alloy composition.

By the author/editor: Kakanakova-Gueor ...; Nilsson, Daniel; Trinh, Xuan Than ...; Son, Nguyen Tien; Janzén, Erik

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