Photoelectrochemical water splitting and hydrogen generation by a spontaneously formed InGaN nanowall network

Willander, Magnus (author): Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan

(creator_code:org_t)

American Institute of Physics (AIP), 2014
2014
English.
In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 104:22, s. 223104-1-223104-3

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Abstract Subject headings

We investigate photoelectrochemical water splitting by a spontaneously formed In-rich InGaN nanowall network, combining the material of choice with the advantages of surface texturing for light harvesting by light scattering. The current density for the InGaN-nanowalls-photoelectrode at zero voltage versus the Ag/AgCl reference electrode is 3.4 mA cm(-2) with an incident-photon-to-current-conversion efficiency (IPCE) of 16% under 350 nm laser illumination with 0.075 W.cm(-2) power density. In comparison, the current density for a planar InGaN-layer-photoelectrode is 2 mA cm(-2) with IPCE of 9% at zero voltage versus the Ag/AgCl reference electrode. The H-2 generation rates at zero externally applied voltage versus the Pt counter electrode per illuminated area are 2.8 and 1.61 mu mol.h(-1).cm(-2) for the InGaN nanowalls and InGaN layer, respectively, revealing similar to 57% enhancement for the nanowalls. (C) 2014 AIP Publishing LLC.

By the author/editor: Alvi, N.H.; Soto Rodriguez, ...; Kumar, Praveen; Gomez, V.J.; Aseev, P.; Alvi, A.H.; show more...; Alvi, M.A.; Willander, Magnu ...; Noetzel, R.; show less...

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