SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:liu-109131"
 

Search: onr:"swepub:oai:DiVA.org:liu-109131" > Modeling of Charge ...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Modeling of Charge Transport in Ion Bipolar Junction Transistors

Volkov, Anton (author)
Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan
Tybrandt, Klas (author)
Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan
Berggren, Magnus (author)
Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan
show more...
Zozoulenko, Igor (author)
Linköpings universitet,Fysik och elektroteknik,Tekniska högskolan
show less...
 (creator_code:org_t)
2014-06-05
2014
English.
In: Langmuir. - : American Chemical Society (ACS). - 0743-7463 .- 1520-5827. ; 30:23, s. 6999-7005
  • Journal article (peer-reviewed)
Abstract Subject headings
Close  
  • Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poissons and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Publication and Content Type

ref (subject category)
art (subject category)

Find in a library

  • Langmuir (Search for host publication in LIBRIS)

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Find more in SwePub

By the author/editor
Volkov, Anton
Tybrandt, Klas
Berggren, Magnus
Zozoulenko, Igor
About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
NATURAL SCIENCES
NATURAL SCIENCES
and Physical Science ...
Articles in the publication
Langmuir
By the university
Linköping University

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view