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Applications of vap...
Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
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- Thierry-Jebali, N. (author)
- Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
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- Lazar, M. (author)
- Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
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- Vo-Ha, A. (author)
- Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
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- Carole, D. (author)
- Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
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- Souliere, V. (author)
- Soulière, V., Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, UMR 5615, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne, France
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- Henry, Anne (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Planson, D. (author)
- Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
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- Ferro, G. (author)
- Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
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- Konczewicz, L. (author)
- Université de Montpellier, Université Montpellier 2, L2C, CNRS, Montpellier, France
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- Contreras, S. (author)
- Université de Montpellier, Université Montpellier 2, L2C, CNRS, Montpellier, France
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- Brylinski, C. (author)
- Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
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- Brosselard, P. (author)
- Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
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(creator_code:org_t)
- Trans Tech Publications, 2014
- 2014
- English.
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In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. - 9783038350101 ; , s. 639-644
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- Ohmic contact; P-type 4H-SiC; PiN diode; Selective epitaxial growth; Vapor-liquid-solid
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- By the author/editor
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Thierry-Jebali, ...
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Lazar, M.
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Vo-Ha, A.
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Carole, D.
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Souliere, V.
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Henry, Anne
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show more...
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Planson, D.
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Ferro, G.
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Konczewicz, L.
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Contreras, S.
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Brylinski, C.
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Brosselard, P.
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
- Articles in the publication
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SILICON CARBIDE ...
- By the university
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Linköping University