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Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts

Thierry-Jebali, N. (author)
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
Lazar, M. (author)
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
Vo-Ha, A. (author)
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
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Carole, D. (author)
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
Souliere, V. (author)
Soulière, V., Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, UMR 5615, 43 Bd du 11 Novembre 1918, F-69622 Villeurbanne, France
Henry, Anne (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
Planson, D. (author)
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
Ferro, G. (author)
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
Konczewicz, L. (author)
Université de Montpellier, Université Montpellier 2, L2C, CNRS, Montpellier, France
Contreras, S. (author)
Université de Montpellier, Université Montpellier 2, L2C, CNRS, Montpellier, France
Brylinski, C. (author)
Université de Lyon, Université Claude Bernard Lyon1, LMI, CNRS, Villeurbanne, France
Brosselard, P. (author)
Université de Lyon, INSA de Lyon, Laboratoire AMPÈRE, CNRS, Villeurbanne, France
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 (creator_code:org_t)
Trans Tech Publications, 2014
2014
English.
In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. - 9783038350101 ; , s. 639-644
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Ohmic contact; P-type 4H-SiC; PiN diode; Selective epitaxial growth; Vapor-liquid-solid

Publication and Content Type

ref (subject category)
kon (subject category)

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