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Characterization of...
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Asghar, M.Islamia University of Bahawalpur, Pakistan
(author)
Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy
- Article/chapterEnglish2014
Publisher, publication year, extent ...
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2014-09-12
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IOP Publishing,2014
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-112488
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-112488URI
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https://doi.org/10.1088/1674-1056/23/9/097101DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|Fulbright-USA; UNC-Charlotte
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We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 +/- 0.03 eV and capture cross-section of 8.57 +/- 10(-18) cm(2). Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Mahmood, K.Islamia University of Bahawalpur, Pakistan
(author)
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Hasan, M. A.University of N Carolina, NC 28223 USA
(author)
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Ferguson, I. T.University of N Carolina, NC 28223 USA
(author)
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Tsu, R.University of N Carolina, NC 28223 USA
(author)
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Willander, MagnusLinköpings universitet,Fysik och elektroteknik,Tekniska högskolan(Swepub:liu)magwi72
(author)
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Islamia University of Bahawalpur, PakistanUniversity of N Carolina, NC 28223 USA
(creator_code:org_t)
Related titles
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In:Chinese Physics B: IOP Publishing23:9, s. 097101-1674-1056
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