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Fundamental Limitat...
Fundamental Limitations for Electroluminescence in Organic Dual-Gate Field-Effect Transistors
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- Christian Roelofs, W. S. (author)
- Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands
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- Spijkman, Mark-Jan (author)
- Philips Research Labs, Netherlands
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- Mathijssen, Simon G. J. (author)
- Eindhoven University of Technology, Netherlands
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- Janssen, Rene A. J. (author)
- Eindhoven University of Technology, Netherlands
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- de Leeuw, Dago M. (author)
- Max Planck Institute Polymer Research, Germany; King Abdulaziz University, Saudi Arabia
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- Kemerink, Martijn (author)
- Eindhoven University of Technology, MB, Eindhoven, The Netherlands
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(creator_code:org_t)
- 2014-03-25
- 2014
- English.
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In: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 26:26, s. 4450-
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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