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Fundamental Limitations for Electroluminescence in Organic Dual-Gate Field-Effect Transistors

Christian Roelofs, W. S. (author)
Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands
Spijkman, Mark-Jan (author)
Philips Research Labs, Netherlands
Mathijssen, Simon G. J. (author)
Eindhoven University of Technology, Netherlands
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Janssen, Rene A. J. (author)
Eindhoven University of Technology, Netherlands
de Leeuw, Dago M. (author)
Max Planck Institute Polymer Research, Germany; King Abdulaziz University, Saudi Arabia
Kemerink, Martijn (author)
Eindhoven University of Technology, MB, Eindhoven, The Netherlands
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 (creator_code:org_t)
2014-03-25
2014
English.
In: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 26:26, s. 4450-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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