Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Chen, Jr-Tai (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Persson, Ingemar (author): Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan

Nilsson, Daniel (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Hsu, Chih-Wei (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Palisaitis, Justinas (author): Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten

Forsberg, Urban (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

Persson, Per (author): Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan

Janzén, Erik (author): Linköpings universitet,Halvledarmaterial,Tekniska högskolan

(creator_code:org_t)

American Institute of Physics (AIP), 2015
2015
English.
In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 106:25

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Abstract Subject headings

A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.

By the author/editor: Chen, Jr-Tai; Persson, Ingemar; Nilsson, Daniel; Hsu, Chih-Wei; Palisaitis, Just ...; Forsberg, Urban; show more...; Persson, Per; Janzén, Erik; show less...

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