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- Chen, Jr-TaiLinköpings universitet,Halvledarmaterial,Tekniska högskolan (author)
Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
- Article/chapterEnglish2015
Publisher, publication year, extent ...
- American Institute of Physics (AIP),2015
- electronicrdacarrier
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- LIBRIS-ID:oai:DiVA.org:liu-117133
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117133URI
- https://doi.org/10.1063/1.4922877DOI
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- Language:English
- Summary in:English
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- A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed.
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- NATURVETENSKAP Fysik hsv//swe
- NATURAL SCIENCES Physical Sciences hsv//eng
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- Persson, IngemarLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)ingpe67 (author)
- Nilsson, DanielLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)danni86 (author)
- Hsu, Chih-WeiLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)chihs22 (author)
- Palisaitis, JustinasLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)juspa01 (author)
- Forsberg, UrbanLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)urbfo25 (author)
- Persson, PerLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)perpe25 (author)
- Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14 (author)
- Linköpings universitetHalvledarmaterial (creator_code:org_t)
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- In:Applied Physics Letters: American Institute of Physics (AIP)106:250003-69511077-3118
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