Search: onr:"swepub:oai:DiVA.org:liu-117133" > Room-Temperature mo...
Fältnamn | Indikatorer | Metadata |
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000 | 03101naa a2200385 4500 | |
001 | oai:DiVA.org:liu-117133 | |
003 | SwePub | |
008 | 150417s2015 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1171332 URI |
024 | 7 | a https://doi.org/10.1063/1.49228772 DOI |
040 | a (SwePub)liu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Chen, Jr-Taiu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)jrtch43 |
245 | 1 0 | a Room-Temperature mobility above 2200 cm2/V.s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure |
264 | 1 | b American Institute of Physics (AIP),c 2015 |
338 | a electronic2 rdacarrier | |
520 | a A high mobility of 2250 cm2/V·s of a two-dimensional electron gas (2DEG) in a metalorganic chemical vapor deposition-grown AlGaN/GaN heterostructure was demonstrated. The mobility enhancement was a result of better electron confinement due to a sharp AlGaN/GaN interface, as confirmed by scanning transmission electron microscopy analysis, not owing to the formation of a traditional thin AlN exclusion layer. Moreover, we found that the electron mobility in the sharp-interface heterostructures can sustain above 2000 cm2/V·s for a wide range of 2DEG densities. Finally, it is promising that the sharp-interface AlGaN/GaN heterostructure would enable low contact resistance fabrication, less impurity-related scattering, and trapping than the AlGaN/AlN/GaN heterostructure, as the high-impurity-contained AlN is removed. | |
650 | 7 | a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng |
700 | 1 | a Persson, Ingemaru Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)ingpe67 |
700 | 1 | a Nilsson, Danielu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)danni86 |
700 | 1 | a Hsu, Chih-Weiu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)chihs22 |
700 | 1 | a Palisaitis, Justinasu Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten4 aut0 (Swepub:liu)juspa01 |
700 | 1 | a Forsberg, Urbanu Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)urbfo25 |
700 | 1 | a Persson, Peru Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan4 aut0 (Swepub:liu)perpe25 |
700 | 1 | a Janzén, Eriku Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)erija14 |
710 | 2 | a Linköpings universitetb Halvledarmaterial4 org |
773 | 0 | t Applied Physics Lettersd : American Institute of Physics (AIP)g 106:25q 106:25x 0003-6951x 1077-3118 |
856 | 4 | u https://liu.diva-portal.org/smash/get/diva2:805915/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print |
856 | 4 | u http://liu.diva-portal.org/smash/get/diva2:805915/FULLTEXT01 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117133 |
856 | 4 8 | u https://doi.org/10.1063/1.4922877 |
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