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Optical properties ...
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Gällström, AndreasLinköpings universitet,Halvledarmaterial,Tekniska fakulteten
(author)
Optical properties and Zeeman spectroscopy of niobium in silicon carbide
- Article/chapterEnglish2015
Publisher, publication year, extent ...
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American Physical Society,2015
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-117972
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117972URI
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https://doi.org/10.1103/PhysRevB.92.075207DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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At the time for thesis presentation publication was in status: ManuscriptFunding Agencies|Knut and Alice Wallenberg Foundation; Lendulet program of the Hungarian Academy of Sciences; Hungarian OTKA Project [K101819]; Ministry of Education and Science of the Russian Federation [14.Y26.31.0005]; Tomsk State University Academic D. I. Mendeleev Fund Program [8.1.18.2015]
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The optical signature of niobium in the low-temperature photoluminescence spectra of three common polytypes of SiC (4H, 6H, and 15R) is observed and confirms the previously suggested concept that Nb occupies preferably the Si-C divacancy with both Si and C at hexagonal sites. Using this concept we propose a model considering a Nb-bound exciton, the recombination of which is responsible for the observed luminescence. The exciton energy is estimated using first-principles calculation and the result is in very good agreement with the experimentally observed photon energy in 4H SiC at low temperature. The appearance of six Nb-related lines in the spectra of the hexagonal 4H and 6H polytypes at higher temperatures is tentatively explained on the grounds of the proposed model and the concept that the Nb center can exist in both C1h and C3v symmetries. The Zeeman splitting of the photoluminescence lines is also recorded in two different experimental geometries and the results are compared with theory based on phenomenological Hamiltonians. Our results show that Nb occupying the divacancy at the hexagonal site in the studied SiC polytypes behaves like a deep acceptor.
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Magnusson, BjörnLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)bjoma90
(author)
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Leone, StefanoLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)stele19
(author)
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Kordina, OlofLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ollko50
(author)
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Son, Nguyen TienLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)nguso90
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Ivády, ViktorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Wigner Research Center for Physics, Hungarian Academy of Sciences, Hungary(Swepub:liu)vikiv58
(author)
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Gali, AdamWigner Research Center for Physics, Hungarian Academy of Sciences, Budapest Hungary; Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary(Swepub:liu)adaga79
(author)
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Abrikosov, Igor A.Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Materials Modeling and Development Laboratory, NUST “MISIS,” Moscow, Russia; LACOMAS Laboratory, Tomsk State University, Tomsk, Russia(Swepub:liu)igoab43
(author)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)erija14
(author)
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Ivanov, Ivan G.Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ivaiv28
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
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In:Physical Review B. Condensed Matter and Materials Physics: American Physical Society92:7, s. 1-141098-01211550-235X
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Gällström, Andre ...
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Magnusson, Björn
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Leone, Stefano
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Kordina, Olof
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Ivády, Viktor
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