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Infrared dielectric...
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Ben Sedrine, NabihaLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan,University of Aveiro, Portugal; University of Aveiro, Portugal
(author)
Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 less than= x less than= 0.22)
- Article/chapterEnglish2015
Publisher, publication year, extent ...
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2015-09-17
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IOP PUBLISHING LTD,2015
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-122192
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-122192URI
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https://doi.org/10.1088/0022-3727/48/41/415102DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|Swedish Research Council (VR) [2013-5580]; Swedish Governmental Agency for Innovation Systems (VINNOVA) [2011-03486]; Swedish Foundation for Strategic Research (SSF) [2012FFL12-0181]; National Science Foundation [MRSEC DMR-0820521, EPS-1004094]; Stiftelsen Lars Hiertas Minne [FO2013-0587]; [RECI/FIS-NAN/0183/2012 (FCOMP-01-0124-FEDER-027494)]
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YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 less than= x less than= 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E-1(TO) and LO, and the Raman active E-2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E-1(TO), E-2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, epsilon(infinity), the static dielectric constant, epsilon(0), and the Born effective charge Z(B) are established and discussed.
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Zukauskaite, AgneLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten,Fraunhofer Institute Appl Solid State Phys, Germany(Swepub:liu)agnzu70
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Birch, JensLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)jenbi91
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Jensen, JensLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)jenje80
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Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)larhu75
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Schoeche, S.University of Nebraska, NE 68588 USA
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Schubert, M.University of Nebraska, NE 68588 USA
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Darakchieva, VanyaLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)vanda79
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Linköpings universitetTunnfilmsfysik
(creator_code:org_t)
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In:Journal of Physics D: IOP PUBLISHING LTD48:41, s. 415102-0022-37271361-6463
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