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Notes on the plasma...
Notes on the plasma resonance peak employed to determine doping in SiC
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- Engelbrecht, J. A. A. (author)
- Nelson Mandela Metropolitan University, South Africa
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- van Rooyen, I. J. (author)
- Idaho National Lab, ID 83415 USA
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- Henry, Anne (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Janzén, Erik (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Sephton, B. (author)
- Nelson Mandela Metropolitan University, South Africa
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(creator_code:org_t)
- ELSEVIER SCIENCE BV, 2015
- 2015
- English.
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In: Infrared physics & technology. - : ELSEVIER SCIENCE BV. - 1350-4495 .- 1879-0275. ; 72, s. 95-100
- Related links:
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https://www.osti.gov...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant gamma. (C) 2015 Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Keyword
- Infrared reflectance; SiC; Plasma resonance; Doping concentration
Publication and Content Type
- ref (subject category)
- art (subject category)
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