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Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations

Imam, Mewlude (author)
Linköpings universitet,Tekniska fakulteten,Tunnfilmsfysik,European Spallat Source ESS AB, Sweden
Gaul, Konstantin (author)
University of Marburg, Germany; University of Marburg, Germany
Stegmueller, Andreas (author)
University of Marburg, Germany; University of Marburg, Germany
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Höglund, Carina (author)
Linköping University,Lund University,Lunds universitet,Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,European Spallat Source ESS AB, Sweden,European Spallation Source ESS AB,Stiftelser och övriga anknutna verksamheter,Other Institutions and Utilities
Jensen, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Tonner, Ralf (author)
University of Marburg, Germany; University of Marburg, Germany
Pedersen, Henrik (author)
Linköpings universitet,Kemi,Tekniska fakulteten
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 (creator_code:org_t)
2015
2015
English.
In: Journal of Materials Chemistry C. - : ROYAL SOC CHEMISTRY. - 2050-7526 .- 2050-7534. ; 3:41, s. 10898-10906
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations. A comprehensive thermochemical catalogue for the species of the gas phase chemistry of TEB is examined and found to be dominated by beta-hydride eliminations of C2H4 to yield BH3. A complementary bimolecular reaction path based on H-2 assisted C2H6 elimination to BH3 is also significant at lower temperatures in the presence of hydrogen. Furthermore, we find a temperature window of 600-1000 degrees C for the deposition of X-ray amorphous BxC films with 2.5 less than= x less than= 4.5 from TEB. Films grown at temperatures below 600 degrees C contain high amounts of H, while temperatures above 1000 degrees C result in C-rich films. The film density and hardness are determined to be in the range of 2.40-2.65 g cm(-3) and 29-39 GPa, respectively, within the determined temperature window.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)
NATURVETENSKAP  -- Kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)
NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

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