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A fully-differential OTA in 28 nm UTBB FDSOI CMOS for PGA applications

Harikumar, Prakash (author)
Linköpings universitet,Elektroniska Kretsar och System,Tekniska fakulteten
Wikner, Jacob (author)
Linköpings universitet,Elektroniska Kretsar och System,Tekniska fakulteten
Alvandpour, Atila (author)
Linköpings universitet,Elektroniska Kretsar och System,Tekniska fakulteten
 (creator_code:org_t)
IEEE, 2015
2015
English.
In: 2015 European Conference on Circuit Theory and Design (ECCTD). - : IEEE. - 9781479998777 ; , s. 13-16
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • This paper presents a fully-differential operational transconductance amplifier (OTA) designed in a 28 nm ultra-thin box and body (UTBB) fully-depleted silicon-on-insulator (FDSOI) CMOS process. An overview of the features of the 28 nm UTBB FDSOI process which are relevant for the design of analog/mixed-signal circuits is provided. The OTA which features continuous-time CMFB circuits will be employed in the programmable gain amplifier (PGA) for a 9-bit, 1 kS/s SAR ADC. The reverse body bias (RBB) feature of the FDSOI process is used to enhance the DC gain by 6 dB. The OTA achieves rail-to-rail output swing and provides DC gain = 70 dB, unity-gain frequency = 4.3 MHz and phase margin = 68ï¿œ while consuming 2.9 μW with a Vdd = 1 V. A high linearity > 12 bits without the use of degeneration resistors and a settling time of 5.8 μs (11-bit accuracy) are obtained under nominal operating conditions. The OTA maintains satisfactory performance over all process corners and a temperature range of [-20oC +85oC].

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Signalbehandling (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Signal Processing (hsv//eng)

Keyword

CMOS integrated circuits;analogue-digital conversion;mixed analogue-digital integrated circuits;operational amplifiers;silicon-on-insulator;PGA;SAR ADC;Si;UTBB FDSOI CMOS process;analog-mixed-signal circuits;continuous-time CMFB circuits;frequency 4.3 MHz;fully-differential OTA;gain 6 dB;gain 70 dB;operational transconductance amplifier;power 2.9 muW;programmable gain amplifier;reverse body bias;size 28 nm;temperature -20 degC to 85 degC;time 5.8 mus;ultrathin box and body fully-depleted silicon-on-insulator;voltage 1 V;word length 9 bit;Electronics packaging;Gain;Linearity;MOS devices;Resistors;Threshold voltage;Transistors

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