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AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Bergsten, Johan (author)
Chalmers, Gothenburg, Sweden
Li, Xun (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Nilsson, Daniel (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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Danielsson, Örjan (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Pedersen, Henrik (author)
Linköpings universitet,Kemi,Tekniska fakulteten
Janzén, Erik (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Forsberg, Urban (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Rorsman, Niklas (author)
Chalmers, Gothenburg, Sweden
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 (creator_code:org_t)
Institute of Physics Publishing (IOPP), 2016
2016
English.
In: Japanese Journal of Applied Physics. - : Institute of Physics Publishing (IOPP). - 0021-4922 .- 1347-4065. ; 55, s. 05FK02-1-05FK02-4
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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