AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.

Li, XunLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)xunli87 (author)
Nilsson, DanielLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)danni86 (author)
Danielsson, ÖrjanLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)orjda90 (author)
Pedersen, HenrikLinköpings universitet,Kemi,Tekniska fakulteten(Swepub:liu)henpe50 (author)
Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)erija14 (author)
Forsberg, UrbanLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)urbfo25 (author)
Rorsman, NiklasChalmers, Gothenburg, Sweden (author)
Chalmers, Gothenburg, SwedenHalvledarmaterial (creator_code:org_t)

In:Japanese Journal of Applied Physics: Institute of Physics Publishing (IOPP)55, s. 05FK02-1-05FK02-40021-49221347-4065

By the author/editor: Bergsten, Johan; Li, Xun; Nilsson, Daniel; Danielsson, Örja ...; Pedersen, Henrik; Janzén, Erik; show more...; Forsberg, Urban; Rorsman, Niklas; show less...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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