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AlGaN/GaN high elec...
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Bergsten, JohanChalmers, Gothenburg, Sweden
(author)
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
- Article/chapterEnglish2016
Publisher, publication year, extent ...
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Institute of Physics Publishing (IOPP),2016
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-128077
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128077URI
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https://doi.org/10.7567/JJAP.55.05FK02DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Li, XunLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)xunli87
(author)
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Nilsson, DanielLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)danni86
(author)
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Danielsson, ÖrjanLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)orjda90
(author)
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Pedersen, HenrikLinköpings universitet,Kemi,Tekniska fakulteten(Swepub:liu)henpe50
(author)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)erija14
(author)
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Forsberg, UrbanLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)urbfo25
(author)
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Rorsman, NiklasChalmers, Gothenburg, Sweden
(author)
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Chalmers, Gothenburg, SwedenHalvledarmaterial
(creator_code:org_t)
Related titles
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In:Japanese Journal of Applied Physics: Institute of Physics Publishing (IOPP)55, s. 05FK02-1-05FK02-40021-49221347-4065
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