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Low Temperature Pho...
Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications
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- Peyre, Hervé (author)
- Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France
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- Sun, Jianwu (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
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- Guelfucci, Jude (author)
- Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France
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- Juillaguet, Sandrine (author)
- Université Montpellier 2, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France
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- Ul-Hassan, Jawad (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Henry, Anne (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Contreras, S. (author)
- CNRS, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France
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- Brosselard, Pierre (author)
- Laboratoire des Multimateriaux et Interfaces, UMR-CNRS 5615, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Camassel, Jean (author)
- CNRS, Laboratoire Charles Coulomb UMR 5221, F-34095, Montpellier, France
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(creator_code:org_t)
- 2012
- 2012
- English.
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In: HeteroSiC & WASMPE 2011. ; , s. 164-168
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Focusing on the change in aluminium-related photoluminescence lines in 4H-SiC versus doping concentration, we have used a combination of LTPL (Low Temperature PhotoLuminescence) and secondary ion mass spectrometry measurements to set new calibration curves. In this way, one can probe the change in aluminum concentration in the range 1017 to 1019 cm-3. When applied to LTPL maps collected on full 3-inch wafers, we show that such abacuses constitute a powerful tool to control efficiently the doping level of as-grown p+ (emitters) and p++ (contact) layers for power device applications.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Hot-Wall CVD
- Low Temperature Photoluminescence
- Al Doping
- 4H-SiC
Publication and Content Type
- ref (subject category)
- kon (subject category)
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