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Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
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- Marinova, Maya (author)
- Thessaloniki , Greece
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- Andreadou, A. (author)
- Thessaloniki , Greece
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- Sun, JianWu (author)
- Groupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
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- (creator_code:org_t)
- 2011
- 2011
- English.
- In: Silicon Carbide and Related Materials 2010. ; , s. 241-244
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- 3C-SiC
- LTPL
- Post-Growth Annealing
- VLS
- TEM
- Defect
Publication and Content Type
- ref (subject category)
- kon (subject category)
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- Marinova, Maya
- Andreadou, A.
- Sun, JianWu
- Lorenzzi, J.
- Mantzari, A.
- Zoulis, Georgios
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- Camassel, Jean
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- Linköping University
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