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Influence of Post-G...
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Marinova, MayaThessaloniki , Greece
(author)
Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
- Article/chapterEnglish2011
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LIBRIS-ID:oai:DiVA.org:liu-128854
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128854URI
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https://doi.org/10.4028/www.scientific.net/MSF.679-680.241DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:kon swepub-publicationtype
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The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
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Andreadou, A.Thessaloniki , Greece
(author)
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Sun, JianWuGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France(Swepub:liu)jiasu75
(author)
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Lorenzzi, J.Villeurbanne; France
(author)
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Mantzari, A.Thessaloniki , Greece
(author)
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Zoulis, GeorgiosGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
(author)
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Jegenyes, NikolettaVilleurbanne; France
(author)
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Juillaguet, SandrineGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
(author)
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Soulière, VeroniqueVilleurbanne; France
(author)
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Ferro, G.Villeurbanne; France
(author)
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Camassel, JeanGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
(author)
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Polychroniadis, Efstathios K.Thessaloniki , Greece
(author)
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Thessaloniki , GreeceGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France
(creator_code:org_t)
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In:Silicon Carbide and Related Materials 2010, s. 241-244
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Marinova, Maya
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Andreadou, A.
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Sun, JianWu
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Lorenzzi, J.
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Mantzari, A.
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Zoulis, Georgios
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Jegenyes, Nikole ...
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Ferro, G.
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NATURAL SCIENCES
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Linköping University