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  • Marinova, MayaThessaloniki , Greece (author)

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

  • Article/chapterEnglish2011

Publisher, publication year, extent ...

  • 2011
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-128854
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-128854URI
  • https://doi.org/10.4028/www.scientific.net/MSF.679-680.241DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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Classification

  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Andreadou, A.Thessaloniki , Greece (author)
  • Sun, JianWuGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France(Swepub:liu)jiasu75 (author)
  • Lorenzzi, J.Villeurbanne; France (author)
  • Mantzari, A.Thessaloniki , Greece (author)
  • Zoulis, GeorgiosGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France (author)
  • Jegenyes, NikolettaVilleurbanne; France (author)
  • Juillaguet, SandrineGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France (author)
  • Soulière, VeroniqueVilleurbanne; France (author)
  • Ferro, G.Villeurbanne; France (author)
  • Camassel, JeanGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France (author)
  • Polychroniadis, Efstathios K.Thessaloniki , Greece (author)
  • Thessaloniki , GreeceGroupe d’Etudes des Semiconducteurs, Université Montpellier 2 and CNRS, cc 074‐GES, 34095 Montpellier Cedex 5, France (creator_code:org_t)

Related titles

  • In:Silicon Carbide and Related Materials 2010, s. 241-244

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