Search: onr:"swepub:oai:DiVA.org:liu-132407" >
Cavity-enhanced opt...
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
-
- Armakavicius, Nerijus (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Bouhafs, Chamseddine (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Stanishev, Vallery (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
show more...
-
- Kühne, Philipp (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Knight, Sean (author)
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, USA
-
- Hofmann, Tino (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, USA / Department of Physics and Optical Science, University of North Carolina at Charlotte, USA
-
- Schubert, Mathias (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, USA
-
- Darakchieva, Vanya (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
show less...
-
(creator_code:org_t)
- Elsevier, 2017
- 2017
- English.
-
In: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 421, s. 357-360
- Related links:
-
https://www.scienced...
-
show more...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Cavity-enhanced optical Hall effect at terahertz (THz) frequencies is employed to determine the free charge carrier properties in epitaxial graphene (EG) with different number of layers grown by high-temperature sublimation on 4H-SiC(0001). We find that one monolayer (ML) EG possesses p-type conductivity with a free hole concentration in the low 1012 cmᅵᅵᅵ2 range and a free hole mobility parameter as high as 1550 cm2/Vs. We also find that 6 ML EG shows n-type doping behavior with a much lower free electron mobility parameter of 470 cm2/Vs and an order of magnitude higher free electron density in the low 1013 cmᅵᅵᅵ2 range. The observed differences are discussed. The cavity-enhanced THz optical Hall effect is demonstrated to be an excellent tool for contactless access to the type of free charge carriers and their properties in two-dimensional materials such as EG.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Keramteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Ceramics (hsv//eng)
Keyword
- THz optical Hall effect
- Epitaxial graphene
- Free charge carrier properties
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database