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Asymmetric relaxati...
Asymmetric relaxation of SiGe/Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping
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- Elfving, Anders (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Zhao, Ming (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Hansson, Göran V. (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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- Ni, Wei-Xin (author)
- Linköpings universitet,Yt- och Halvledarfysik,Tekniska högskolan
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(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- English.
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In: Applied physics letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 181901-1--181901-3
- Related links:
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http://urn.kb.se/res...
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http://urn.kb.se/res...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Strain relaxation of SiGe/Si(110) has been studied by x-ray reciprocal space mapping. To get information about the in-plane lattice mismatch in different directions, two-dimensional maps around, e.g., (260) and (062) reciprocal lattice points have been obtained from Si0.8Ge0.2/Si(110) samples, which were exposed to different annealing conditions. The in-plane lattice mismatch was found to be asymmetric with the major strain relaxation observed in the lateral [001] direction. This was associated with the formation and propagation of dislocations oriented along [10]. The relaxation of as-grown structures during postannealing is thus different from relaxation during growth, which is mainly along [10].
Keyword
- Ge-Si alloys
- silicon
- semiconductor materials
- elemental semiconductors
- X-ray diffraction
- annealing
- dislocations
- stress relaxation
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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