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Growth and thermal stability of TiN/ZrAlN: Effect of internal interfaces

Yalamanchili, Phani Kumar (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten
Wang, Fei (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,University of Saarland, Germany
Aboulfadl, Hisham (author)
University of Saarland, Germany
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Barrirero, Jenifer (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten,University of Saarland, Germany
Rogström, Lina (author)
Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
Jimenez-Pique, Emilio (author)
University of Politecn Cataluna, Spain; CRnE UPC, Spain
Muecklich, Frank (author)
University of Saarland, Germany
Tasnadi, Ferenc (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
Odén, Magnus (author)
Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
Ghafoor, Naureen (author)
Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
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 (creator_code:org_t)
Pergamon Press, 2016
2016
English.
In: Acta Materialia. - : Pergamon Press. - 1359-6454 .- 1873-2453. ; 121, s. 396-406
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Wear resistant hard films comprised of cubic transition metal nitride (c-TMN) and metastable c-AlN with coherent interfaces have a confined operating envelope governed by the limited thermal stability of metastable phases. However, equilibrium phases (c-TMN and wurtzite(w)-AlN) forming semicoherent interfaces during film growth offer higher thermal stability. We demonstrate this concept for a model multilayer system with TiN and ZrAlN layers where the latter is a nanocomposite of ZrN- and AlN-rich domains. The interfaces between the domains are tuned by changing the AlN crystal structure by varying the multilayer architecture and growth temperature. The interface energy minimization at higher growth temperature leads to formation of semicoherent interfaces between w-AlN and c-TMN during growth of 15 nm thin layers. Ab initio calculations predict higher thermodynamic stability of semicoherent interfaces between c-TMN and w-AlN than isostructural coherent interfaces between c-TMN and c-AlN. The combination of a stable interface structure and confinement of w-AlN to nm-sized domains by its low solubility in c-TMN in a multilayer, results in films with a stable hardness of 34 GPa even after annealing at 1150 degrees C. (C) 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Thermal stability
TM-Al-N multilayer films
Nanostructured materials
Interface energy
Three-dimensional atom probe (3DAP)
Transmission electron microscopy

Publication and Content Type

ref (subject category)
art (subject category)

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