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- Mehnke, FrankTechnical University of Berlin, Germany (author)
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%
- Article/chapterEnglish2016
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- AMER INST PHYSICS,2016
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- LIBRIS-ID:oai:DiVA.org:liu-132851
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-132851URI
- https://doi.org/10.1063/1.4964442DOI
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- Language:English
- Summary in:English
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- Funding Agencies|Deutsche Forschungsgemeinschaft (DFG) within the collaborative Research Center "Semiconductor Nanophotonics" [SFB 787]; German Federal Ministry of Education and Research (BMBF) within the "UltraSens" project [13N12587]; Swedish Research Council (VR); Linkoping Linnaeus Initiative for Novel Functional Materials (LiLi-NFM)
- The dependence of the activation energy as well as the energetic levels of the neutral charge state and the DX center of the Si donor in AlxGa1-xN: Si samples on aluminum content and SiH4/III ratio were investigated by electron paramagnetic resonance (EPR) measurements, Van-der-Pauw resistivity measurements, and Hall-effect measurements. It was found by EPR measurements that the energy distance of the neutral charge state of the Si donor from the conduction band increases with increasing aluminum content from 61 meV for x = 0.82 to 106 meV for x = 0.89. Additionally, the formation of a DX center below the neutral charge state which is deepening from 6 meV for x = 0.82 to 58 meV for x = 0.89 is observed. This results in a linearly increasing activation energy with increasing aluminum content from 67 meV for x = 0.82 to 164 meV for x = 0.89. This is consistent with the activation energies as determined by Hall-effect measurements showing a linear increase from 24 meV for x = 0.85 to 211 meV for x = 0.96, as well as the activation energies as determined by Van-der-Pauw resistivity measurements. By varying the SiH4/III ratio we observed a formation of a minimum resistivity in accordance with the room temperature charge carrier density. However, no clear dependence of the activation energy was observed. EPR measurements of samples with a high SiH4/III ratio hint to an increased incorporation probability of a deep secondary donor species which might explain the increase in resistivity. Published by AIP Publishing.
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- Trinh, Xuan ThangLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)xuatr28 (author)
- Pingel, HaraldTech Univ Berlin, Inst Festkorperphys, Berlin, Germany (author)
- Wernicke, TimTechnical University of Berlin, Germany (author)
- Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)erija14 (author)
- Nguyen, Son TienLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)nguso90 (author)
- Kneissl, MichaelTech Univ Berlin, Berlin, Germany; Leibniz Inst Hochstfrequenztech, Berlin, Germany (author)
- Technical University of Berlin, GermanyHalvledarmaterial (creator_code:org_t)
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- In:Journal of Applied Physics: AMER INST PHYSICS120:140021-89791089-7550
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