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Novel GaNAs and GaN...
Novel GaNAs and GaNP-based Nanowires - Promising Materials for Optoelectronics and Photonics
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- Buyanova, Irina (author)
- Linköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material
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- Chen, Weimin (author)
- Linköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material
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- Ishikawa, F. (author)
- Ehime University, Japan
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- Tu, C. W. (author)
- University of Calif San Diego, USA
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(creator_code:org_t)
- IEEE, 2016
- 2016
- English.
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In: 2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). - : IEEE. - 9781509014934 ; , s. 38-41
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zincblende NWs of various diameters. We also demonstrate that, though the GaNxP1-x alloys have rather wide bandgap energies of 1.9 - 2.3 eV, the coaxial GaNP NWs absorb infrared light via two-step two-photon absorption.
Subject headings
- NATURVETENSKAP -- Fysik -- Annan fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Other Physics Topics (hsv//eng)
Keyword
- nanowire; dilute nitrides; gallium phosphide; gallium arsenide
Publication and Content Type
- ref (subject category)
- kon (subject category)
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