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Surface functionali...
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Kaushik, Priya DarshniLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Jamia Millia Islamia, India
(author)
Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application
- Article/chapterEnglish2017
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ELSEVIER SCIENCE BV,2017
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-136854
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136854URI
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https://doi.org/10.1016/j.apsusc.2017.01.111DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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Funding Agencies|Graphene Flagship [CNECT-ICT-604391]; Swedish Research Council [2015-05876]
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In this work, surface functionalization of epitaxial graphene grown on silicon carbide was performed by ion irradiation to investigate their gas sensing capabilities. Swift heavy ion irradiation using 100 MeV silver ions at four varying fluences was implemented on epitaxial graphene to investigate morphological and structural changes and their effects on the gas sensing capabilities of graphene. Sensing devices are expected as one of the first electronic applications using graphene and most of them use functionalized surfaces to tailor a certain function. In our case, we have studied irradiation as a tool to achieve functionalization. Morphological and structural changes on epitaxial graphene layers were investigated by atomic force microscopy, Raman spectroscopy, Raman mapping and reflectance mapping. The surface morphology of irradiated graphene layers showed graphene folding, hillocks, and formation of wrinkles at highest fluence (2 x 10(13) ions/cm(2)). Raman spectra analysis shows that the graphene defect density is increased with increasing fluence, while Raman mapping and reflectance mapping show that there is also a reduction of monolayer graphene coverage. The samples were investigated for ammonia and nitrogen dioxide gas sensing applications. Sensors fabricated on pristine and irradiated samples showed highest gas sensing response at an optimal fluence. Our work provides new pathways for introducing defects in controlled manner in epitaxial graphene, which can be used not only for gas sensing application but also for other applications, such as electrochemical, biosensing, magnetosensing and spintronic applications. (C) 2017 Elsevier B.V. All rights reserved.
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Ivanov, Ivan GueorguievLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ivaiv28
(author)
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Lin, Pin-ChengLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten
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Kaur, GurpreetUniversity of Delhi, India
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Eriksson, JensLinköpings universitet,Tillämpad sensorvetenskap,Tekniska fakulteten(Swepub:liu)jener58
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Lakshmi, G. B. V. S.Interuniv Accelerator Centre, India
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Avasthi, D. K.Interuniv Accelerator Centre, India; Amity Institute Nanotechnol, India
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Gupta, VinayUniversity of Delhi, India
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Aziz, AnverJamia Millia Islamia, India
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Siddiqui, Azher M.Jamia Millia Islamia, India
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Syväjärvi, MikaelLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)miksy08
(author)
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Yazdi, GholamrezaLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ghoya53
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
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In:Applied Surface Science: ELSEVIER SCIENCE BV403, s. 707-7160169-43321873-5584
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Kaushik, Priya D ...
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Avasthi, D. K.
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