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In-situ terahertz o...
In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
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- Knight, Sean (author)
- University of Nebraska, NE 68588 USA
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- Hofmann, Tino (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,University of Nebraska, NE 68588 USA; University of N Carolina, NC 28223 USA
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- Bouhafs, Chamseddine (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Armakavicius, Nerijus (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Kuhne, Philipp (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Stanishev, Vallery (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ivanov, Ivan Gueorguiev (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Wimer, Shawn (author)
- University of Nebraska, NE 68588 USA
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- Schubert, Mathias (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,University of Nebraska, NE 68588 USA; Leibniz Institute Polymerforsch Dresden eV, Germany
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- Darakchieva, Vanya (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- 2017-07-11
- 2017
- English.
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In: Scientific Reports. - : NATURE PUBLISHING GROUP. - 2045-2322. ; 7
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https://doi.org/10.1...
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Abstract
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- Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Knight, Sean
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Hofmann, Tino
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Bouhafs, Chamsed ...
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Armakavicius, Ne ...
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Kuhne, Philipp
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Stanishev, Valle ...
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Ivanov, Ivan Gue ...
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Yakimova, Rosits ...
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Wimer, Shawn
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Schubert, Mathia ...
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Darakchieva, Van ...
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
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Scientific Repor ...
- By the university
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Linköping University