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Fast ambipolar inte...
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Roelofs, W. S. C.Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands
(author)
Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)
- Article/chapterEnglish2011
Publisher, publication year, extent ...
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American Institute of Physics (AIP),2011
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-141463
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141463URI
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https://doi.org/10.1063/1.3589986DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|NanoNextNL; European Community [248092]; Dutch Technology Foundation
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Ambipolar integrated circuits were prepared with poly (diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm(2)/V s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3589986]
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Mathijssen, S. G. J.Philips Research Labs, Netherlands; University of Groningen, Netherlands
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Bijleveld, J. C.Eindhoven University of Technology, Netherlands
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Raiteri, D.Eindhoven University of Technology, Netherlands
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Geuns, T. C. T.Philips Research Labs, Netherlands
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Kemerink, M.Eindhoven University of Technology, Netherlands(Swepub:liu)marke89
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Cantatore, E.Eindhoven University of Technology, Netherlands
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Janssen, R. A. J.Eindhoven University of Technology, Netherlands
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de Leeuw, D. M.Philips Research Labs, Netherlands; University of Groningen, Netherlands
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Eindhoven University of Technology, Netherlands; Philips Research Labs, NetherlandsPhilips Research Labs, Netherlands; University of Groningen, Netherlands
(creator_code:org_t)
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In:Applied Physics Letters: American Institute of Physics (AIP)98:200003-69511077-3118
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