SwePub
Sök i LIBRIS databas

  Extended search

onr:"swepub:oai:DiVA.org:liu-141480"
 

Search: onr:"swepub:oai:DiVA.org:liu-141480" > Bias-stress effect ...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Bias-stress effect and recovery in organic field effect transistors: Proton migration mechanism

Sharma, A. (author)
Eindhoven University of Technology, Netherlands
Mathijssen, Simon G. J. (author)
Eindhoven University of Technology, Netherlands
Kemerink, M. (author)
Eindhoven University of Technology, Netherlands
show more...
de Leeuw, Dago M. (author)
[Sharma, Netherlands
Bobbert, Peter A. (author)
Eindhoven University of Technology, Netherlands
show less...
 (creator_code:org_t)
Society of Photo-optical Instrumentation Engineers (SPIE), 2010
2010
English.
In: ORGANIC FIELD-EFFECT TRANSISTORS IX. - : Society of Photo-optical Instrumentation Engineers (SPIE). - 9780819482747
  • Conference paper (peer-reviewed)
Abstract Subject headings
Close  
  • Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Bias-stress; recovery; protons; instabilities; organic transistor

Publication and Content Type

ref (subject category)
kon (subject category)

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view