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50-830 MHz noise an...
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Arshad, SanaNED University of Engn and Technology, Pakistan
(author)
50-830 MHz noise and distortion canceling CMOS low noise amplifier
- Article/chapterEnglish2018
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Elsevier,2018
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LIBRIS-ID:oai:DiVA.org:liu-143987
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-143987URI
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https://doi.org/10.1016/j.vlsi.2017.07.006DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
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Funding Agencies|UAE University, Alain, UAE [31N157]
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In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm(2). Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured 811 and S22 are better than -8.9 dB and -8.5 dB, respectively within the 0.05-1 GHz band. The 1-dB compression point is -11.5 dBm at 700 MHz, while the IIP3 is -6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.
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Ramzan, RashadUnited Arab Emirates University, U Arab Emirates
(author)
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Wahab, Qamar-ul,1955-Linköpings universitet,Tekniska fakulteten,Halvledarmaterial(Swepub:liu)qamwa17
(author)
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NED University of Engn and Technology, PakistanUnited Arab Emirates University, U Arab Emirates
(creator_code:org_t)
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In:Integration: Elsevier60, s. 63-730167-92601872-7522
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