Fast epitaxy by PVT of SiC in hydrogen atmosphere

• Epitaxial growth in hydrogen atmosphere has been studied in relation to sublimation epitaxial growth. A new type of features with a hexagonal shape are observed in the layers grown in hydrogen atmosphere. The morphological details of the features have been studied with optical microscopy and atomic force microscopy. An interactive relation of the defect appearance with the step flow growth mode seems to be present. The results are compared with growth in vacuum, argon, and helium conditions. The possible influence of thermal component to a reactive one in hydrogen etching is discussed.

Subject headings

MEDICIN OCH HÄLSOVETENSKAP  -- Medicinska och farmaceutiska grundvetenskaper -- Andra medicinska och farmaceutiska grundvetenskaper (hsv//swe)

MEDICAL AND HEALTH SCIENCES  -- Basic Medicine -- Other Basic Medicine (hsv//eng)

Keyword

A1. Defects

A1. Nucleation

A3. Physical vapor deposition processes

Chemistry

Kemi

Publication and Content Type

ref (subject category)

art (subject category)