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Growth of high quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition

Forsberg, Urban, 1971- (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan,Material Physics, Material Science
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
MacMillan, M. F. (author)
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Persson, P. O. Å. (author)
Linköpings universitet,Institutionen för fysik, kemi och biologi
Janzén, Erik (author)
Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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 (creator_code:org_t)
1998
1998
English.
In: Proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, 1997. ; , s. 1133-1136
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • Epitaxial films of high quality AlN have been grown on SiC substrates at 1200 °C and 1450 °C, using a hot-wall CVD reactor. The thickness of the epitaxial layers were measured using room temperature infrared reflectance. To verify the crystal quality, X-ray diffraction (XRD) rocking curves of the ALN 0002 peak were measured. A 250 Å thick film grown at 1450°C had a full width half maximum (FWHM) of 42 arcsec, whereas a 1000 Å thick film grown at 1200 °C had a FWHM of 100 arcsec. A TEM image of the sample grown at the lower temperature showed thickness of around 950 Å, thereby verifying the infrared reflectance measurements. We conclude that the higher temperature the better the crystal quality we obtain.  

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

Keyword

Hot-Wall CVD
Thin Film
XRD
TEM
Infrared reflectance
Material physics with surface physics
Materialfysik med ytfysik

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kon (subject category)

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