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Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques

Kilic, Ufuk (author)
Univ Nebraska, NE 68588 USA
Sekora, Derek (author)
Univ Nebraska, NE 68588 USA
Mock, Alyssa (author)
Univ Nebraska, NE 68588 USA
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Korlacki, Rafal (author)
Univ Nebraska, NE 68588 USA
Valloppilly, Shah (author)
Univ Nebraska, NE 68588 USA
Echeverria, Elena M. (author)
Univ Nebraska, NE 68588 USA
Ianno, Natale (author)
Univ Nebraska, NE 68588 USA
Schubert, Eva (author)
Univ Nebraska, NE 68588 USA
Schubert, Mathias (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska, NE 68588 USA; Leibniz Inst Polymer Res Dresden, Germany
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 (creator_code:org_t)
AMER INST PHYSICS, 2018
2018
English.
In: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 124:11
  • Journal article (peer-reviewed)
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  • WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV, and from multiple samples were utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by the density functional theory. The surface roughness was investigated using atomic force microscopy, and compared with the effective roughness as seen by the spectroscopic ellipsometry. Published by AIP Publishing.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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