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Band-gap tailoring ...
Band-gap tailoring of Zno by means of heavy Al doping
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- Sernelius, Bo, 1948- (author)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Solid State Dioision, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
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- Berggren, Karl-Fredrik, 1937- (author)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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- Jin,, Z.-C. (author)
- Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
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- Hamberg, Ivar (author)
- Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
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- Granqvist, Claes Göran (author)
- Physics Department, Chalmers Uniuersity of Technology, Gothenburg, Sweden
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(creator_code:org_t)
- American Physical Society, 1988
- 1988
- English.
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In: Physical Review B Condensed Matter. - : American Physical Society. - 0163-1829 .- 1095-3795. ; 37:17, s. 10244-10248
- Related links:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Films of ZnO:Al were produced by weakly reactive dual-target magnetron sputtering. Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping.The widening could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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