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Understanding the e...
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Guo, XuewenEast China Normal Univ, Peoples R China
(author)
Understanding the effect of N2200 on performance of J71 : ITIC bulk heterojunction in ternary non-fullerene solar cells
- Article/chapterEnglish2019
Publisher, publication year, extent ...
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Elsevier,2019
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-158534
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-158534URI
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https://doi.org/10.1016/j.orgel.2019.05.004DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|National Science Foundation of China [11604099, 21875067, 51873138, 51811530011]; Shanghai Rising -Star [19QA1403100]; Shanghai Science and Technology Innovation Action Plan [17JC1402500]; National Key Project for Basic Research of China [2017YFA0303403]; Swedish Research Council [2016-05498]; Swedish Government Strategic Research Area in Materials Science on Advanced Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; STINT grant [CH2017-7163]
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None-fullerene solar cells with ternary architecture have attracted much attention because it is an effective approach for boosting the device power conversion efficiency. Here, the crystalline polymer N2200 as the third component is integrated into J71: ITIC bulk heterojunction. A series of characterizations indicate that N2200 could increase photo-harvesting, balanced hole and electron mobilities, enhanced exciton dissociation, and suppressed charge recombination, which result in the comprehensive improvement of open circuit voltage, short circuit current and fill factor in the device. Moreover, after introduction of N2200, the morphology of the ternary active layer is optimized, and the film crystallinity is improved. This work demonstrates that adding a small quantity of high crystallization acceptor into non-fullerene donor: acceptor mixture is a promising strategy toward developing high-performance organic solar cells.
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Added entries (persons, corporate bodies, meetings, titles ...)
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Li, DanqinEast China Normal Univ, Peoples R China
(author)
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Zhang, YuexingSoochow Univ, Peoples R China
(author)
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Jan, MingShanghai Jiao Tong Univ, Peoples R China
(author)
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Xu, JinqiuShanghai Jiao Tong Univ, Peoples R China
(author)
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Wang, ZhiquanEast China Normal Univ, Peoples R China
(author)
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Li, BoEast China Normal Univ, Peoples R China
(author)
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Xiong, ShaobingEast China Normal Univ, Peoples R China
(author)
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Li, YanqingSoochow Univ, Peoples R China
(author)
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Liu, FengShanghai Jiao Tong Univ, Peoples R China
(author)
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Tang, JianxinSoochow Univ, Peoples R China
(author)
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Duan, ChungangEast China Normal Univ, Peoples R China; Shanxi Univ, Peoples R China
(author)
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Fahlman, Mats,1967-Linköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten(Swepub:liu)matfa21
(author)
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Bao, QinyeLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,East China Normal Univ, Peoples R China; Shanxi Univ, Peoples R China; Soochow Univ, Peoples R China(Swepub:liu)qinba41
(author)
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East China Normal Univ, Peoples R ChinaSoochow Univ, Peoples R China
(creator_code:org_t)
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In:Organic electronics: Elsevier71, s. 65-711566-11991878-5530
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Guo, Xuewen
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Li, Danqin
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Zhang, Yuexing
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Jan, Ming
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Xu, Jinqiu
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Wang, Zhiquan
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Li, Bo
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Xiong, Shaobing
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Li, Yanqing
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Liu, Feng
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Tang, Jianxin
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Duan, Chungang
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Fahlman, Mats, 1 ...
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Bao, Qinye
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- ENGINEERING AND TECHNOLOGY
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Organic electron ...
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Linköping University