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Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking
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- Hwang, Sunbin (author)
- KIST, South Korea
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- Jang, Sukjae (author)
- KIST, South Korea
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- Kang, Minji (author)
- KIST, South Korea
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- Bae, Sukang (author)
- KIST, South Korea
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- Lee, Seoung-Ki (author)
- KIST, South Korea
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- Hong, Jae-Min (author)
- KIST, South Korea
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- Lee, Sang Hyun (author)
- Chonnam Natl Univ, South Korea
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- Wang, Gunuk (author)
- Korea Univ, South Korea
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- Fabiano, Simone (author)
- Linköpings universitet,Fysik och elektroteknik,Tekniska fakulteten
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- Berggren, Magnus (author)
- Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten
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- Kim, Tae-Wook (author)
- KIST, South Korea
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(creator_code:org_t)
- 2019-06-20
- 2019
- English.
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In: ACS Applied Materials and Interfaces. - : AMER CHEMICAL SOC. - 1944-8244 .- 1944-8252. ; 11:28, s. 25358-25368
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- organic ferroelectric memory; organic field-effect transistor; bis-FB-N-3; inverter; switchable functions
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Hwang, Sunbin
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Jang, Sukjae
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Kang, Minji
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Bae, Sukang
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Lee, Seoung-Ki
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Hong, Jae-Min
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show more...
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Lee, Sang Hyun
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Wang, Gunuk
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Fabiano, Simone
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Berggren, Magnus
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Kim, Tae-Wook
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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ACS Applied Mate ...
- By the university
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Linköping University