Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al-N co-doped SiC

• High concentrations of aluminum (Al) and nitrogen (N) dopants of 6H SiC have been achieved by a fast sublimation growth process. The Al-N co-doped 6H-SiC layer exhibits a strong light-blue photoluminescence emission at low temperatures due to emissions from D-I centers and donor acceptor pairs (DAP). The photoluminescence quenching mechanisms of those emissions are different. The decrease of free carrier capture cross-section as temperature increases according to the cascade capture process causes quenching of the photoluminescence emission form D-I centers. Emission from Al-N DAP centers exhibits an exponential quenching with activation energy of (95 +/- 10) meV. This is attributed to a competing hole capture by non-radiative defect in a multiphonon emission process.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Publication and Content Type

ref (subject category)

art (subject category)