Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

• This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Open Circuit Voltage Decay

Carrier Lifetime Temperature-Dependence

Bipolar Diode

OCVD

Publication and Content Type

ref (subject category)

kon (subject category)