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UV-assisted gate bi...
UV-assisted gate bias cycling in gas-sensitive field-effect transistors
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- Bastuck, Manuel (author)
- Linköpings universitet,Sensor- och aktuatorsystem,Tekniska fakulteten,Saarland University, Lab for Measurement Technology, Germany
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- Puglisi, Donatella, 1980- (author)
- Linköpings universitet,Sensor- och aktuatorsystem,Tekniska fakulteten
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- Lloyd Spetz, Anita, 1951- (author)
- Linköpings universitet,Sensor- och aktuatorsystem,Tekniska fakulteten
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- Schuetze, Andreas (author)
- Saarland University, Saarbrücken, Germany
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- Sauerwald, Tilman (author)
- Saarland University, Saarbrücken, Germany
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- Andersson, Mike, 1977- (author)
- Linköpings universitet,Sensor- och aktuatorsystem,Tekniska fakulteten
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(creator_code:org_t)
- 2018-12-17
- 2018
- English.
- Related links:
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https://doi.org/10.3...
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https://liu.diva-por... (primary) (Raw object)
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https://www.mdpi.com...
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https://urn.kb.se/re...
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https://doi.org/10.3...
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Abstract
Subject headings
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- Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Kemiteknik -- Annan kemiteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Chemical Engineering -- Other Chemical Engineering (hsv//eng)
Publication and Content Type
- ref (subject category)
- kon (subject category)
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