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Transmorphic epitax...
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
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- Lu, Jun (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Chen, Jr-Tai (author)
- SweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden
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- Dahlqvist, Martin, 1982- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Kabouche, Riad (author)
- Inst Elect Microelect and Nanotechnol, France
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- Medjdoub, Farid (author)
- Inst Elect Microelect and Nanotechnol, France
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- Rosén, Johanna (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Kordina, Olof (author)
- SweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden
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- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- AMER INST PHYSICS, 2019
- 2019
- English.
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In: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 115:22
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https://aip.scitatio...
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Abstract
Subject headings
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- Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN nucleation layers (NLs) grown by metalorganic chemical vapor deposition on SiC (0001) substrates mediated by an interface extending over two atomic layers L1 and L2 with composition (Al1/3Si2/3)(2/3)N and (Al2/3Si1/3)N, respectively. It is remarkable that the interfaces have ordered vacancies on one-third of the Al/Si position in L1, as shown here by analytical scanning transmission electron microscopy and ab initio calculations. This unique interface is coined the out-of-plane compositional-gradient with in-plane vacancy-ordering and can perfectly transform the in-plane lattice atomic configuration from the SiC substrate to the AlN NL within 1 nm thick transition. This transmorphic epitaxial scheme enables a critical breakdown field of similar to 2 MV/cm achieved in thin GaN-based transistor heterostructures grown on top. Lateral breakdown voltages of 900 V and 1800 V are demonstrated at contact distances of 5 and 20 mu m, respectively, and the vertical breakdown voltage is amp;gt;= 3 kV. These results suggest that the transmorphic epitaxially grown AlN layer on SiC may become the next paradigm for GaN power electronics. (C) 2019 Author(s).
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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