Effects of Bi incorporation on recombination processes in wurtzite GaBiAs nanowires

• The effects of Bi incorporation on the recombination process in wurtzite (WZ) GaBiAs nanowires are studied by employing micro-photoluminescence (mu-PL) and time-resolved PL spectroscopies. It is shown that at low temperatures (T amp;lt; 75 K) Bi-induced localization effects cause trapping of excitons within band-tail states, which prolongs their lifetime and suppresses surface nonradiative recombination (SNR). With increasing temperature, the trapped excitons become delocalized and their lifetime rapidly shortens due to facilitated SNR. Furthermore, Bi incorporation in the GaBiAs NW is found to have a minor influence on the surface states responsible for SNR.

Subject headings

NATURVETENSKAP  -- Biologi (hsv//swe)

NATURAL SCIENCES  -- Biological Sciences (hsv//eng)

Keyword

GaBiAs; nanowires; wurtzite; exciton localization; surface recombination

Publication and Content Type

ref (subject category)

art (subject category)