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Outermost AlGaO(x)n...
Outermost AlGaO(x)native oxide as a protection layer for GaAs/AlGaAs core-multishell nanowires
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- Tsutsumi, Rikuo (author)
- Ehime Univ, Japan
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- Tsuda, Naoki (author)
- Ehime Univ, Japan
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- Zhang, Bin (author)
- Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten
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- Chen, Weimin (author)
- Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten
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- Buyanova, Irina (author)
- Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten
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- Ishikawa, Fumitaro (author)
- Ehime Univ, Japan
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(creator_code:org_t)
- 2020-06-09
- 2020
- English.
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In: APPLIED PHYSICS EXPRESS. - : IOP PUBLISHING LTD. - 1882-0778 .- 1882-0786. ; 13:7
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https://doi.org/10.3...
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Abstract
Subject headings
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- We propose native oxide AlGaO(x)outer protective layer for GaAs/AlGaAs core-multishell nanowires to provide yearly stable stronger optical and electrical confinement within the nanowire core. We prepared core-multishell NWs consisting of GaAs core, Al0.2Ga0.8As multi-layered barrier layer, and amorphous Al(0.9)Ga(0.1)O(x)outer shell, which was obtained simply by growing Al-rich AlGaAs and exposing the NWs to the ambient air. Photoluminescence from the NWs reveals that the Al(0.9)Ga(0.1)O(x)outer shell provides efficient optical confinement and creates a compressive strain in the interior of the NW that enhances and blueshifts the photoluminescence of the GaAs core.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Nanowire; Si; GaAs; Oxide; passivation; Luminescence; Epitaxy
Publication and Content Type
- ref (subject category)
- art (subject category)
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