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Unprecedented diffe...
Unprecedented differences in the diamond nucleation density between carbon- and silicon-faces of 4H-silicon carbides
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- Wang, Bo (author)
- Chinese Acad Sci, Peoples R China
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- Sukkaew, Pitsiri (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Song, Guichen (author)
- Chinese Acad Sci, Peoples R China
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- Rosenkranz, Andreas (author)
- Univ Chile, Chile
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- Lu, Yunxiang (author)
- Chinese Acad Sci, Peoples R China
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- Nishimura, Kazhihito (author)
- Kogakuin Univ, Japan
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- Wang, Jia (author)
- Univ Nebraska, NE 68588 USA
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- Lyu, Jilei (author)
- Chinese Acad Sci, Peoples R China
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- Cao, Yang (author)
- Chinese Acad Sci, Peoples R China
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- Yi, Jian (author)
- Chinese Acad Sci, Peoples R China
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- Ojamäe, Lars (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Li, He (author)
- Chinese Acad Sci, Peoples R China
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- Jiang, Nan (author)
- Chinese Acad Sci, Peoples R China
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(creator_code:org_t)
- ELSEVIER SCIENCE INC, 2020
- 2020
- English.
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In: Chinese Chemical Letters. - : ELSEVIER SCIENCE INC. - 1001-8417 .- 1878-5964. ; 31:7, s. 2013-2018
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Abstract
Subject headings
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- 4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction, heat sink and mechanical sealing. Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides. Nevertheless, as a typical polar material, the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet. In this contribution, nucleation of diamond was performed on the carbon- and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device. The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face. Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film, which is different from columnar diamond growth structure on the silicon-face. Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals. In addition, kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s) dimers on silicon-faces than carbon-faces, resulting in much lower nucleation densities on silicon-faces. (C) 2019 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Keyword
- 4H-silicon carbide; Diamond nucleation mechanism; Transmission electron microscopy; Transition state theory; Kinetic model simulation
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Wang, Bo
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Sukkaew, Pitsiri
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Song, Guichen
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Rosenkranz, Andr ...
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Lu, Yunxiang
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Nishimura, Kazhi ...
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show more...
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Wang, Jia
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Lyu, Jilei
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Cao, Yang
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Yi, Jian
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Ojamäe, Lars
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Li, He
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Jiang, Nan
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Chemical Science ...
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and Inorganic Chemis ...
- Articles in the publication
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Chinese Chemical ...
- By the university
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Linköping University