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Topotaxial growth of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films
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- Höglund, Carina, 1981- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Beckers, Manfred (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Schell, Norbert (author)
- GKSS Research Center Geesthacht
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- (creator_code:org_t)
- AIP Publishing, 2007
- 2007
- English.
- In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:174106
- Journal article (peer-reviewed)
Abstract
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- The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.
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- NATURAL SCIENCES
- NATURVETENSKAP
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- art (subject category)
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