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Perspective-Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC

Pedersen, Henrik (author)
Linköpings universitet,Kemi,Tekniska fakulteten
Ojamäe, Lars (author)
Linköpings universitet,Kemi,Tekniska fakulteten
Danielsson, Örjan (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
 (creator_code:org_t)
2020-10-15
2020
English.
In: ECS Journal of Solid State Science and Technology. - : ELECTROCHEMICAL SOC INC. - 2162-8769 .- 2162-8777. ; 9:10
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  • The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be boosted by addition of chlorine. This has been explored and applied for hard coatings and electronic grade SiC. We briefly summarize the recent research done in the field of SiC CVD and discuss the understanding of the CVD chemistry with addition of halides. We seek to improve a previous statement that SiCl(2)is the main silicon species for growth of SiC. Recent experiments and modeling suggest that SiCl2, and its fluorinated and brominated analogues, are inactive and that SiF/SiCl/SiBr are the main halogenated species for growth.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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Ojamäe, Lars
Danielsson, Örja ...
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