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Perspective-Current...
Perspective-Current Understanding of the Halogenated Deposition Chemistry for Chemical Vapor Deposition of SiC
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- Pedersen, Henrik (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Ojamäe, Lars (author)
- Linköpings universitet,Kemi,Tekniska fakulteten
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- Danielsson, Örjan (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- 2020-10-15
- 2020
- English.
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In: ECS Journal of Solid State Science and Technology. - : ELECTROCHEMICAL SOC INC. - 2162-8769 .- 2162-8777. ; 9:10
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Abstract
Subject headings
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- The deposition rate of silicon carbide (SiC) in chemical vapor deposition (CVD) can be boosted by addition of chlorine. This has been explored and applied for hard coatings and electronic grade SiC. We briefly summarize the recent research done in the field of SiC CVD and discuss the understanding of the CVD chemistry with addition of halides. We seek to improve a previous statement that SiCl(2)is the main silicon species for growth of SiC. Recent experiments and modeling suggest that SiCl2, and its fluorinated and brominated analogues, are inactive and that SiF/SiCl/SiBr are the main halogenated species for growth.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- vet (subject category)
- art (subject category)
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